Sputter deposition:
“Standard”
Sputter deposition with one gun (e.g. 57Fe) at normal incidence or 45°, 70° and 80° relative to surface normal.
Heating of the sample to 250°C max. .
Remote controlled magnetic field (in-situ) at desired (but fixed) orientation in-plane. B_max = 75 mT.
Remote controlled rotation the sample in-plane +/- 90deg (without heater no limitation for rotation).
Reaching base pressure of 10-7 mbar region in around 1 to 2 hours after sample change.
Reflectivity measurements up to 4° with 38 mm Be-windows(120 um thick). Exit angle can be increased with a 60 mm Be-window.
“More advanced and time consuming”
Deposition with up to 3 guns at different orientation relative to sample plane.
Base pressure better 1x10-8 mbar (with min. 12h bake-out).
High temperature annealing without magnetic field and sample rotation. Max. temperature has to be discussed (600 °C - 1000 °C).
Continuous detection of applied field (in-situ) with hall probe.
Note:
A small amount of 57Fe can be provided (for deposition of a few tens of nm). For multilayer production users should provide their own sputter target (1 inch, thickness max. 0.3 mm).
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